A 180 nm CMOS Integrated Optoelectronic Sensing System for Biomedical Applications

This paper reports on a CMOS fully integrated optoelectronic sensing system composed of Si photodiode and transimpedance amplifier acting as the electronic analog front-end for conditioning photocurrent generated by photodiode. The proposed device has been specifically designed fabricated wearable/portable/implantable biomedical applications. massive employment sensor systems in different industrial medical fields requires development small devices that, together with suitable front ends, must be to into proper standard technologies. Concerning applications, these possible, making them non-invasive, comfortable tools patients operating reduced supply voltage power consumption. In this sense, solutions semiconductor light source fulfill requirements while also ensuring high compatibility biological tissues. reported is implemented TSMC 180 nm technology combines based PNP junction area 0.01 mm2 at transistor level requiring 0.002 capable manage up nanoampere input currents powered 1.8 V single showing maximum consumption about 54 μW, providing gain that tunable 123 dBΩ an associated bandwidth 500 kHz. both working principle developed ASIC experimental measurements its full electrical characterizations. Moreover, case-examples validated through optical detection emulated electrocardiography photoplethysmography signal patterns.